Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
726832 | Materials Science in Semiconductor Processing | 2013 | 4 Pages |
Quantum well intermixing (QWI) has been widely used in modifying the bandgap of semiconductor materials, post-growth; it has been investigated in fabricating non-absorbing mirror regions of laser cavities to improve output power. In this work, the QWI mechanism is briefly introduced. A concentration distribution function in multiple quantum wells is mathematically obtained for odd and even wells respectively. In addition, a 650 nm AlGaInP/GaInP quantum well wafer is fabricated by metal organic vapor phase epitaxy, and a series of quantum well intermixing experiments is accomplished by Zn impurity diffusions. Based on experimental data, a concentration distribution function is simulated and an inter-diffusion coefficient between Al and Ga is calculated. Finally, the effects of QWI on the inter-diffusion coefficient are discussed.