Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
726855 | Materials Science in Semiconductor Processing | 2013 | 6 Pages |
Abstract
Secco etchant is conventionally used for delineation of flow pattern defects (FPDs) in lightly-doped Czochralski (Cz) silicon wafers. However, the FPDs in heavily doped p-type silicon wafers cannot be well delineated by Secco etchant. Herein, an etchant based on the CrO3HFH2O system, with an optimized volume ratio of V(CrO3):V(HF)=2:3, where the concentration of CrO3 is 0.25–0.35 M, has been developed for delineation of FPDs with well-defined morphologies for the heavily boron (B)-doped p-type silicon wafers.
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Electrical and Electronic Engineering
Authors
Tao Xu, Xinpeng Zhang, Xiangyang Ma, Deren Yang,