CuInS2 nanoparticles: Microwave-assisted synthesis, characterization, and photovoltaic measurements

For the first time, (1,8-diamino-3,6-dioxaoctan)copper(II) sulfate, [Cu(DADO)]SO4, and bis(propylenediamine)copper(II) sulfate, [Cu(pn)2]SO4, complexes as copper precursors have been used to prepare CuInS2 (CIS) nanoparticles in the presence of microwave irradiation. InCl3 anhydrous, thioacetamide (TAA), and propylene glycol were used as indium source, sulfur precursor, and solvent, respectively. Additionally, sodium dodecyl sulfate (SDS) was used as a capping agent. In this method, microwave irradiation created the activation energy for dissociating the precursors and led to the formation of CuInS2 nanoparticles. The effect of preparation parameters such as microwave power, irradiation time, and type of copper precursor on the particle size of the products was studied. To fabricate a solar cell, CdS film was directly deposited on top of the CIS film through the chemical bath deposition method. The as-deposited CdS/CuInS2 films were used for the photovoltaic measurements. According to I–V curves, it was found that the CIS nanoparticles synthesized by [Cu(DADO)]SO4 complex as precursor was better for solar cell applications.