Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
726935 | Materials Science in Semiconductor Processing | 2013 | 5 Pages |
Abstract
This study reports on the fabrication of a chalcogen-based thermoelectric power generation (TEG) device using p-type Bi0.4Sb1.6Se2.4Te0.6 and n-type Bi2Se0.6Te2.4 legs. Electrical power generation characteristics were monitored by changing both the temperature conditions and the number of p–n couples required to generate maximum power. The significance of the resistances including the internal resistance and contact resistance between legs and electrodes, are discussed. The maximum output power obtained with the 18 p–n couples device was 273.2 mW under the thermal condition of TH=523 K hot-side temperature and ΔT=184 K temperature difference.
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Authors
A. Kadhim, A. Hmood, H. Abu Hassan,