Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
726948 | Materials Science in Semiconductor Processing | 2012 | 11 Pages |
Zinc oxide (ZnO) thin films doped with molybdenum (Mo) have been prepared by the spray pyrolysis technique. X-ray analysis shows that ZnO:Mo thin films crystallize in hexagonal structure with a preferred orientation of the crystallites along (002) direction. The surface topography of these films was performed by the atomic force microscopy. The dispersion of the refractive index was discussed in terms of the single oscillator model proposed by Wemple and DiDomenico. The single oscillator energy (E0) as well as the dispersion energy (Ed) were therefore calculated. Finally, the electric conductivity was investigated depending on the effect of temperature. The activation energy (Ea) was found to range from 0.63 to 0.94 eV; the electrical behavior can be correlated with Mo-doping.