Article ID Journal Published Year Pages File Type
726966 Materials Science in Semiconductor Processing 2011 8 Pages PDF
Abstract

Highly controllable silicon nano-grass formation is reported based on a hydrogen assisted reactive ion etching method in desirable shapes and locations. By controlling the etching parameters, one can achieve grass-free high aspect ratio vertical or three-dimensional structures on silicon substrates. On the other hand, one can program the etching procedure to arrive at grass-full surfaces and structures in pre-designed features and in desired places. The improved wetting properties of the grass-full surfaces have been investigated. In addition, the grass-full surface has been used to entrap kidney cells. Aspect ratios of the order of 40–50 and features of the size of 250 nm can be achieved.

Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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