| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 726975 | Materials Science in Semiconductor Processing | 2011 | 4 Pages |
A BiFe0.95Mn0.03Zn0.02O3/Bi3.15Nd0.85Ti2.9Zr0.1O12 (BFMZ/BNTZ) heterostructure thin film was prepared on Pt/Ti/SiO2/Si (1 0 0) substrate by a chemical solution deposition (CSD) technique. The structural, magnetic, dielectric properties, and leakage current of the BFMZ/BNTZ heterostructure thin film were thoroughly investigated. The analysis of X-ray diffraction (XRD) demonstrated that the BFMZ/BNTZ heterostructure thin film was of a polycrystalline perovskite structure. A slim magnetic hysteresis (M-H) loop for the BFMZ/BNTZ heterostructure thin film was observed. The dielectric constant together with dielectric loss measurement indicates that the BFMZ/BNTZ thin film exhibit a lossy dielectric with an εr of 60.5 and a tan δ of 0.392 at a frequency of 1 MHz. In addition, the leakage current density of BFMZ/BNTZ thin film measured at an applied electric field of 50 kV/cm is about 5.65×10−4 A/cm2.
