Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
726976 | Materials Science in Semiconductor Processing | 2011 | 4 Pages |
Abstract
N-doped and K–N co-doped ZnO thin films were prepared by chemical bath deposition. The effects of dopants on the microstructure and the optical properties of ZnO thin films are studied using X-ray diffraction (XRD), scanning electron microscopy (SEM), room-temperature photoluminescence and Raman spectroscopy. The results show that the replacement of K ion in ZnO film may lead to the expulsion of the N ion from the lattice of ZnO, which leads to a change of the PL intensity of ZnO films. This conclusion was also proved by the Raman spectra, in which a new peak, centered at 287 cm−1, emerged with the increase of K concentration.
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Authors
Yue Zhao, Mingtao Zhou, Zhiyong Lv, Zhao Li, Jian Huang, Xiaoyan Liang, Jiahua Min,