Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
726979 | Materials Science in Semiconductor Processing | 2011 | 4 Pages |
Abstract
We prepared Ag doped zinc oxide (ZnO:Ag) films using pulsed laser deposition method and studied the Raman spectra of the unannealed and annealed films. The results indicate that the ZnO:Ag films could still retain their wurtzite structure; the A1 (LO) mode resulting from oxygen vacancies and zinc interstitials was observed to be very strong in the Raman spectra. A local vibrational mode at 493 cm−1 induced by Ag doping could also be clearly observed in the Raman spectra, which may be used as an indication of Ag incorporation into the ZnO lattice.
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Authors
L.N. Wang, L.Z. Hu, H.Q. Zhang, Y. Qiu, Y. Lang, G.Q. Liu, J.Y. Ji, J.X. Ma, Z.W. Zhao,