A comprehensive study of MEMS behavior under EOS/ESD events: Breakdown characterization, dielectric charging, and realistic cures

The breakdown characterization of both out- and in-plane electrostatically actuated RF–MEMS switches with air-gaps from 1.0 to 6.7 μm was studied. The emitted electromagnetic field during the testing was analyzed, in order to have an indication of the air-breakdown occurrence. Furthermore, we studied the effect of TLP and HBM events on the dielectric charging of tested MEMS, furnishing the experimental evidence that ESD events should not be responsible of this important reliability problem for MEMS, and that ESD tester parasitic elements can influence the MEMS electromechanical behavior characterization. Finally, a simple, but effective, varistor based protection structure was explored.

► The breakdown characterization of electrostatically actuated RFMEMS switches was carried out. ► The emitted electromagnetic field during the testing was analyzed to evaluate air-breakdown occurrence. ► Possible parasitic effects on the HBM testing of MEMS devices were investigated. ► A varistor based ESD protection structure was explored.