| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 727082 | Materials Science in Semiconductor Processing | 2007 | 5 Pages |
Abstract
The present study is on the optoelectronic properties of isotype CdTe/c-Si heterojunction photodetector made by deposition of CdTe by pulsed laser deposition (PLD) technique on clean monocrystalline Si. Optical, electrical and structural properties of grown CdTe film were investigated. The optical data show that the optical band gap of CdTe was around 1.45Â eV at 300Â K. The CdTe/Si junction exhibits fair diode rectification and the soft breakdown occurred at VB>9Â V. Dark and illuminated I-V characteristics of the CdTe/Si photodetector are examined at room temperature. The photodetector showed good photosensitivity in the visible and near-infrared regions with a value as high as 0.5A/W at 950Â nm.
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Authors
Raid A. Ismail, Khaki I. Hassan, Omar A. Abdulrazaq, Wesam H. Abode,