| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 727084 | Materials Science in Semiconductor Processing | 2007 | 5 Pages |
Abstract
CdTe thin films were brush plated on substrates maintained at temperatures in the range 30–90 °C from the precursors. The films exhibited cubic structure. Optical band gap of 1.45 eV was obtained. XPS measurements indicated the formation of CdTe. AFM studies indicated the formation of fine grains of the order of 50 nm, for the films deposited on room temperature substrates. Hot probe measurements indicated films to be n-type. A mobility in the range of 5–60 cm2 V−1 s−1 and a carrier density of 1015 cm−3 was obtained.
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Authors
K.R. Murali, B. Jayasutha,