Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
727799 | Materials Science in Semiconductor Processing | 2016 | 7 Pages |
Abstract
Ni doped In2O3 (NixIn2−xO3: x=0.00, 0.02, 0.04, 0.06, 0.08 and 0.10) films have been successfully prepared by a sol-gel method. All films have nanograins, cubic structures and single phase. The Ni unsystematically affected the film thickness and surface roughness. All films showed high transmission percentage i.e. in the range of 92–99% at wavelength more than 380 nm. All films except film with x=0.02 and 0.06 have magnetic properties. It is also found that all of the films were sensitive towards the humidity changes and can be used as a humidity sensor.
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Engineering
Electrical and Electronic Engineering
Authors
N.B. Ibrahim, A.Z. Arsad, Noratiqah Yusop, H. Baqiah,