Improvement of data retention characteristics of OSOSO multi-stacked MIS capacitor for flat panel display technology

The data retention ability in metal–oxide–silicon–oxynitride–silicon (MOSOS) devices can be improved using a thicker tunneling layer and novel multi-stacked oxide–silicon–oxynitride–silicon–oxynitride (OSOSO) structure. The OSOSO devices showed 7 fold increase (53.5%) of data retention after a decade compared to OSO devices (6.71%). The improvement in data retention is attributed to the excellent resistance of the charge retention due to the redistribution of electric field across the multi-stacked layers. The spilt storage layer provided a room for storing more charges in different positions of the layers resulting in ~2–3 times increase in memory window. Hence, the performances of those devices are suitable for data storage application in the system-on-panel (SOP) display.