Optimization of a-Si:H absorber layer grown under a low pressure regime by plasma-enhanced chemical vapor deposition: Revisiting the significance of the p/i interface for solar cells

In this study, we revisited the significance of the p/i interface for hydrogenated amorphous silicon (a-Si:H) solar cells. Initially, intrinsic and extrinsic (p and n type) a-Si:H layers were grown in a low pressure regime (0.5–0.1 Torr) using the conventional RF plasma-enhanced chemical vapor deposition process and their opto-electronic properties were optimized for the fabrication of p–i–n a-Si:H solar cells. Subsequently, we obtained new insights in terms of the activation energy and band gap at the p/i interface in these solar cells. The absorber layers deposited at pressures of 0.23 Torr and 0.53 Torr had the highest photosensitivity with a band absorption edge at ~700 nm. Furthermore, the photosensitivity was shown to be correlated with the estimated diffusion length, which effectively defined the carrier transport within the solar cell layers. Moreover, the cell efficiency increased from 1.53% to 5.56% due to the improved p/i interface as well as the higher photosensitivity of the intrinsic/absorber layer.