Formation of a hybrid pn junction via p-type aluminium induced crystallized polycrystalline silicon on hydrothermally grown n-type zinc oxide nanowires

p-Type silicon coated zinc oxide (ZnO) nanowire heterojunction was fabricated using a combination of aluminium induced crystallization (AIC) and hydrothermal growth. The p-type AIC Si/n-type ZnO nanowires stacked layers were extensively characterized by scanning electron microscopy (SEM), energy dispersive spectroscopy (EDX), UV–vis spectroscopy, XRD, photoluminescence emission spectroscopy and electrical measurements. Photovoltaic measurements indicate that the device is light-sensitive and maybe of potential in sensor applications.