Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
728033 | Materials Science in Semiconductor Processing | 2015 | 4 Pages |
Abstract
Current–voltage (I–V) and R0A curves and spectral response as a function of bias voltage and temperature of p–n indium gallium arsenide antimonide (In0.14Ga0.86As0.13Sb0.87)/n-GaSb photodiodes are presented. InGaAsSb quaternary alloys with a bandgap energy of about 653 meV were grown using the liquid phase epitaxy technique on top of (100) GaSb substrates. Device structure was fabricated using a process that includes passivation with sodium sulfide, thermal annealing and metallizations. The diode architecture was a back-illuminated (B-I) structure with a ring-shaped metallic contact in the GaSb substrate face. Photodiode spectral response showed good performance in the entire temperature range between 20 K and 300 K.
Keywords
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
D.M. Hurtado-Castañeda, J.L. Herrera-Pérez, J.S. Arias-Cerón, C. Reyes-Betanzo, P. Rodriguez-Fragoso, J.G. Mendoza-Álvarez,