| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 728044 | Materials Science in Semiconductor Processing | 2015 | 6 Pages |
Abstract
Microstructure and magnetic properties of In1−xCrxN thin films grown on GaN-on-sapphire templates by molecular beam epitaxy are investigated. Optimized growth conditions are identified for the In1−xCrxN thin films at reduced growth temperature. The In1−xCrxN thin films on the top of the InGaN buffer layers exhibit high crystalline-quality. The magnetic properties of In1−xCrxN thin films show a ferromagnetic behavior even at room temperature.
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Authors
Zhongpo Zhou, Haiying Wang, Shuting Niu, Jingju Chen, Zongxian Yang, Chang Liu,