Article ID Journal Published Year Pages File Type
728057 Materials Science in Semiconductor Processing 2015 5 Pages PDF
Abstract

An improved structure of 4H-silicon carbide metal semiconductor field effect transistors with multi-recessed source/drain drift regions (MRD-MESFET) is proposed in this paper. The multi-recessed source/drain drift regions have been introduced to improve both the breakdown voltage and capacitances characteristics. Simulated results indicate that the breakdown voltage of the MRD-MESFET is 141 V compared to 119 V of the reported structure with only single-recessed source/drain region (SRD-MESFET). The output maximum power density is almost 19.1% larger than that of the SRD-MESFET. Also, the cut-off frequency and the maximum oscillation frequency of the proposed structure improve and are 17 GHz and 68 GHz compared to 15 GHz and 59 GHz of the SRD-MESFET due to the decrease in gate–source capacitance, respectively. The lowest gate–source capacitance and the gate–drain capacitance of the MRD-MESFET are obtained with an optimized drain deeper recessed drift region length of 0.2 μm which contribute to superior RF characteristics of MESFETs.

Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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