Fabrication of silicon doped hematite photoelectrode with enhanced photocurrent density via solution processing of an in-situ TEOS modified precursor

The doping of hematite photoelectrode plays a significant role in increasing its photocurrent density. However, to obtain such an electrode in large scale needs a cheap and up-scalable solution – processed route with a good source of precursor. With this notion, in the current study a solution-processing path based on dip coating is described with the phylogeny of a new precursor for obtaining silicon doped hematite. The in-situ TEOS modified precursor results in a silicon-hematite film with a photocurrent density of 2.4 mA/cm2 at 0.6 V vs. Ag/AgCl electrode in 1 M KOH and is higher in comparison to post added TEOS precursor described in an earlier investigation. The processing route is further optimized with different doping concentrations, annealing temperature and the presence and absence of the TEOS interface layer to have optimum photocurrent density. It is found that 0.5% silicon doping concentration without the interface layer gives the best performing electrode. Referable to the efficacy of the process, it can be used further for large scale processing of electrode for water splitting reaction.