| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 728219 | Materials Science in Semiconductor Processing | 2016 | 6 Pages |
Abstract
Ga2O3 were synthesized by controlled thermal oxidation of GaAs substrates at atmospheric pressure. The crystalline structure and vibrational modes were studied as a function of growth temperature within a range of 750–950 °C. Samples grown in the range of 750–850 °C present nanostructured surface and the samples obtained at higher temperature are oriented to the (004) β-phase. Crystalline structure was confirmed by X-ray diffraction, and Raman scattering studies. The evolution of the surface morphology was analyzed by atomic force microscopy, and scanning electron microscopy.
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Authors
C. Galván, M. Galván, J.S. Arias-Cerón, E. López-Luna, H. Vilchis, V.M. Sánchez-R,