Article ID Journal Published Year Pages File Type
728315 Materials Science in Semiconductor Processing 2015 8 Pages PDF
Abstract

SnS thin films were prepared on indium-tin-oxide (ITO)-coated glass substrate at room temperature via three steps pulse electrodeposition from an aqueous bath containing 30 mM SnSO4 and 100 mM Na2S2O3. The effects of two complexing agents, i.e., ethylenediaminetetraacetic (acid-EDTA [CH2N(CH2COOH)2]2) and L(+)-tartaric acid (C4H6O6) under different concentration were studied. All the deposited samples exhibited p-type conductivity behaviour. The films deposited with the complexing agents generally showed less oxygen content and larger sulfur content than those deposited without the agents. The film thickness was decreased by addition of EDTA and low concentration of tartaric acid (<10 mM), while it was slightly increased with a large amount of tartaric acid (>30 mM). Larger crystalline size and larger optical transmission were observed for SnS deposited with tartaric acid concentration larger than 30 mM.

Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
Authors
, , ,