Article ID Journal Published Year Pages File Type
728358 Materials Science in Semiconductor Processing 2013 5 Pages PDF
Abstract

CuAlO2 films were deposited on clean glass substrates by the acrylamide sol–gel dip coating technique. The coated films were dried in air oven for 30 min followed by heat treatment in air at different temperatures in the range of 350–500 °C. The films annealed at low temperatures exhibited weak x-ray diffraction (XRD) peaks. As the post anneal temperature increased beyond 375 °C, the XRD pattern exhibited the diffraction peaks of rhombohedral CuAlO2. Surface morphology of the films indicated that the films annealed at low temperatures exhibit small grains. As the annealing temperature increases larger grains are observed. The root mean square (rms) value of the surface roughness increases with annealing temperature. The films exhibited optical transmission above 75%. The films post annealed at low temperature exhibited lower transmission. Optical band gap in the range of 3.43–3.75 eV was obtained for the films annealed at different temperature. Hall measurements indicated p-type conductivity. Resistivity of the films decreased from 25.0 to 2.0 Ω cm as the anneal temperature increased. Mobility and carrier density increased with annealing temperature.

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Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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