Temperature and hydrostatic pressure dependence of the electronic structure of AlxGa1−xAs alloys

The study of the electronic band structure of AlxGa1−-xAs alloy is calculated within the local empirical pseudo-potential method including the effective disorder potential into the virtual crystal approximation. Monotonic decreasing and increasing functions are obtained for the temperature and pressure dependent form factors, respectively. Some physical quantities as band gaps, bowing parameters, refractive indices, and dielectric constants of the considered alloy with different Al concentration are calculated under the effects of temperature and hydrostatic pressure. The obtained results have been found in good agreement with the experimental and published data.