| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 728540 | Materials Science in Semiconductor Processing | 2014 | 4 Pages |
Abstract
Cu2FeSnS4 thin film, with potential as an effective photovoltaic absorber, was prepared by sulfurizing a (Cu,Sn)S/FeS-structured precursor prepared via successive ionic layer absorption and reaction combined with chemical bath deposition. X-Ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, and UV-vis-NIR absorbance measurements showed that the Cu2FeSnS4 thin film exhibits large agglomeration of rod-shaped grains, a bandgap of Eg=1.22 eV, and a high optical absorption coefficient (>104 cm−1).
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Authors
Hao Guan, Honglie Shen, Baoxiang Jiao, Xu Wang,