| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 728588 | Materials Science in Semiconductor Processing | 2012 | 4 Pages |
Abstract
We fabricated TiO2 thin films the by sol–gel process. Successful I–V curves can be obtained in the Cu/TiO2/ATO structure device in which TiO2 thin film was calcined at 300 °C. The bipolar resistive switching behavior was observed and the ratio of Roff/Ron can be increased to 104. The switching voltage changes from 4.8 to 3.5 V when the current compliance drops from 10 to 0.1 mA. We also investigated the microstructure by HRTEM technology.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Ying Li, Gaoyang Zhao, Xiaofei Zhou, Lining Pan, Yang Ren,