| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 728650 | Materials Science in Semiconductor Processing | 2014 | 5 Pages |
The present paper deals with the electrical characterization of sputtered ZrO2/Si interface deposited in N2 containing plasma. Incorporation of nitrogen in the sputter deposited films was confirmed by glancing angle X-Ray diffraction measurement. MOS C–V and I–V techniques were used for interface characterization. Nitrogen incorporated ZrO2 MOS capacitors exhibited higher breakdown voltage and lower leakage current than structures having ZrO2 dielectric films sputtered in pure argon atmosphere. Different device parameters such as flat band voltage, leakage current, breakdown voltage, charge defects were extracted and compared with and without nitrogen incorporated ZrO2/Si MOS capacitor structures. The effect of post deposition annealing on the electrical behavior of ZrO2/Si interface was also investigated.
