Optical properties of Si0.8Ge0.2/Si multiple quantum wells

The optical property was studied on the Si0.8Ge0.2/Si strained multiple quantum well (MQW) structure grown using ultra-high vacuum chemical vapor deposition (UHV-CVD). Three peaks are observed in Raman spectrum, which are located at about 510, 410, and 300 cm−1, corresponding to the vibration of Si-Si, Si-Ge, and Ge-Ge phonons, respectively. The photoluminescence (PL) spectrum originates from the radiative recombinations both from the Si substrate and the Si0.8Ge0.2/Si MQW. For Si0.8Ge0.2/Si strained MQW, the transition peaks related to the MQW region observed in the photocurrent (PC) spectrum were preliminarily assigned to electron-heavy hole (e-hh) and electron-light hole (e-lh) fundamental excitonic transitions.