Article ID Journal Published Year Pages File Type
728858 Materials Science in Semiconductor Processing 2010 4 Pages PDF
Abstract

A high Q on-chip inductor with some unique structures has been fabricated with 0.13 μm CMOS compatible process for the first time. The unique structures including parallel stacked, line via between inter-metal layers, and use the top signal pad as the under path of the inductor instead of conventional bottom signal pad. These structures offer advantages of reducing resistance, high Q value, simple preparing process and small chip area. Experimental results show that the measured peak Q and peak-Q frequency can attain 7.06 and 1.8 GHz, respectively for the structure with four metal layers in parallel, 15 μm in metal width, 5.5 turns in wire number,and an area of 204×240 μm2. The results have a better potential for advanced mobile communication applications.

Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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