| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 728860 | Materials Science in Semiconductor Processing | 2010 | 6 Pages |
Abstract
Ti/Pt as heating element for gas sensor applications was fabricated on silicon (Si) wafer substrate. The fabricated device was subjected to heat treatment at different prescribed time periods for thermal stability. The energy dispersion spectroscopy (EDS) results of the device indicated that there were no Ti traces on the Pt surface after heat treatment at 450 °C for 3 and 4 h in an argon (Ar) atmosphere. A maximum temperature coefficient of resistance (TCR) with a value of 2.88×10−3 K−1 was obtained for the device with 3 h heat treatment.
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Authors
N.H. Al-Hardan, M.J. Abdullah, A. Abdul Aziz, Z. Hassan,