Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
728867 | Materials Science in Semiconductor Processing | 2012 | 13 Pages |
Abstract
This paper aims at reviewing the state-of-the art of Ge pMOSFETs for future high-performance CMOS devices. Key in the development is the integration of a Ge channel on a silicon platform and the passivation of the interface between the high-k gate stack and the substrate. The different routes will be critically discussed in view of optimizing the on-current related to a high low-field hole mobility and reducing the off-current and the short-channel effects. Finally, an outlook on future technology developments will be formulated.
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Authors
E. Simoen, J. Mitard, G. Hellings, G. Eneman, B. De Jaeger, L. Witters, B. Vincent, R. Loo, A. Delabie, S. Sioncke, M. Caymax, C. Claeys,