| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 728923 | Materials Science in Semiconductor Processing | 2009 | 4 Pages |
Abstract
The kinetics Monte Carlo (KMC) simulation and the rate equation method were used to study the influence of the anisotropic surface migration on the submonolayer growth mechanism. Simulations show that the influence of the migration anisotropy tends to saturate when the migration anisotropy exceeds 100. There is good agreement between the KMC simulation and the adjusted rate-equation. The researches show that it is significant to define a new parameter: effective diffusion rate. The effective diffusion rate is not only determined by the temperature and the hopping barrier, but is also by the anisotropy. The effective surface diffusion rate will decrease with the increase of the surface migration anisotropy.
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Authors
Jianguo Yu, Huibing Mao, Weiping Jing, Jiqing Wang,