| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 728933 | Materials Science in Semiconductor Processing | 2012 | 6 Pages |
Abstract
The effects of rapid thermal annealing on properties of crystalline nanostructured CdTe films treated with CdCl2 and prepared by vacuum evaporation are described. X-ray diffraction confirmed the crystalline nature of post-treated films with high preferential orientation around 23.7°, corresponding to a (1 1 1) diffracted plane of cubic phase. Optical band gap of CdTe films increased from 1.4 eV to 1.48 eV after annealing at 500 °C for 90 s. Atomic force microscopy of annealed films revealed an increase in root mean square roughness and grain size with increased annealing time. Electrical measurements of as-grown and annealed films are consistent with p-type; film resistivity has decreased significantly with increased annealing time.
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Authors
Raid A. Ismail,