Laser annealing for n+/p junction formation in germanium

In the present work we focus our study on laser annealing of implanted with high phosphorus dose p-type germanium wafers using an Nd-YAG laser at 355 nm. Dopant profiles as monitored by SIMS measurements demonstrate dopant profile movement less than 15 nm at junction depth. Germanium (Ge) structural defects were observed by TEM measurements and the roughness of the surface was measured by AFM. The above analysis shows the efficiency of laser annealing in recrystallizing the Ge substrates at lower energy fluences compared to Si and without substantial dopant loss and diffusion.