| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 729014 | Materials Science in Semiconductor Processing | 2006 | 4 Pages |
Abstract
Deep level transient spectroscopy (DLTS) has been applied on high-κ Ge capacitors for the first time to investigate interface states in Si-passivated HfO2 germanium MOS-capacitors. DLTS yielded information about the energy location and density of defects in the Ge bandgap. Evidence was found for an additional interface state peak near midgap for the considered Ge MOS-capacitors.
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Authors
K. Martens, E. Simoen, B. De Jaeger, M. Meuris, G. Groeseneken, H. Maes,