Article ID Journal Published Year Pages File Type
729024 Materials Science in Semiconductor Processing 2006 4 Pages PDF
Abstract

We compare four different selective etching solutions commonly used to highlight threading dislocations (TD), in SiGe hetero-epitaxial layers. The aim is to identify, amongst the many reported in the literature, an etching solution effective over the whole Ge concentration range. Etching experiments have been performed on Si1−xGex linearly graded relaxed buffer layers with a final germanium concentration x   varying from x=0.2x=0.2 to 0.9. All samples have been deposited on Si(1 0 0) by low-energy plasma-enhanced chemical vapour deposition (LEPECVD). The experimental results show that a variant of the so-called Schimmel-etch is successful in revealing TD over the Ge concentration range investigated.

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Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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