Article ID Journal Published Year Pages File Type
729028 Materials Science in Semiconductor Processing 2006 5 Pages PDF
Abstract
By means of atomistic simulations we demonstrate that this elastic repulsion drives a net flux of Ge and Si atoms from one side to the other side of the islands, leading to a lateral displacement of the whole island. This displacement ends when the two islands are sufficiently far away, or when another island is approached during the motion. In a dense ensemble of islands, this mechanism drives the tendency to order observed experimentally.
Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
Authors
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