Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
729028 | Materials Science in Semiconductor Processing | 2006 | 5 Pages |
Abstract
By means of atomistic simulations we demonstrate that this elastic repulsion drives a net flux of Ge and Si atoms from one side to the other side of the islands, leading to a lateral displacement of the whole island. This displacement ends when the two islands are sufficiently far away, or when another island is approached during the motion. In a dense ensemble of islands, this mechanism drives the tendency to order observed experimentally.
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Authors
M. De Seta, G. Capellini, F. Evangelisti, V.A. Zinovyev, G. Vastola, F. Montalenti, Leo Miglio,