Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
729034 | Materials Science in Semiconductor Processing | 2006 | 5 Pages |
Abstract
Si-Ge solid solutions are known to be good high-temperature thermoelectric materials. The aim of the paper is to study the thermoelectric properties of Si-Ge (x=0.01-0.11) whiskers in temperature range 4.2-500 K. Measurements were carried out on whiskers with a boron concentration in the vicinity to metal-insulator transition from dielectric side of the transition. Temperature dependencies of Seebeck coefficient for whiskers with various resistivity (Ï=0.01-0.05 Ω cm) have been investigated. It was found that Seebeck coefficient as a rule decreases slowly at temperature growth. A slope of α(T) curves depends on whisker doping level. The α-value is about 1 mV/K, which is prospective for whisker applications in temperature sensors. To estimate an efficiency of such sensor we have calculated figure of merit Z for the whiskers. Depending on doping level the whisker figure of merit is â¼(1-2)Ã10â4 Kâ1 in the investigated temperature range. Therefore, the obtained results allow to conclude that heavily doped Si-Ge (x=0.01-0.1) whiskers can be successfully used for design of sensors for measuring of cryogenic and the above room temperatures.
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Authors
Anatolij Druzhinin, Igor Ostrovskii, Iurii Kogut,