Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
729048 | Materials Science in Semiconductor Processing | 2006 | 4 Pages |
Abstract
Dislocation semi-loops in the lateral epitaxial region of GaN have been observed and characterized using transmission electron microscopy. The loops are not coplanar in a (0Â 0Â 0Â 1) close-packed plane and the motion of vertical glide is found. The Burgers vectors are determined to be parallel to [0Â 0Â 0Â 1] direction. These evidences demonstrate that a c-axial stress field exists in the lateral region transited from the in-plane stress of the window region. The value and distribution of this special stress field have been measured via Auger electron spectroscopy.
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Authors
Duanjun Cai, Junyong Kang, Shun Ito,