Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
729050 | Materials Science in Semiconductor Processing | 2006 | 6 Pages |
Abstract
Oval defects, which are commonly found in epitaxial (In)Ga(Al)As heterostructures grown by molecular beam epitaxy (MBE) technique, are studied in this paper. The investigations of the morphology as well as the optical properties of defects were performed by scanning electron microscopy (SEM), cathodoluminescence (CL) and spatially resolved photoluminescence (SRPL). The conclusions are drawn as to the sources of defects, conditions of their appearance and their possible internal structure.
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Authors
Anna Szerling, Kamil Kosiel, Anna Wójcik-JedliÅska, Mariusz PÅuska, Maciej Bugajski,