Dislocation of high-quality large DCP-ZnTe substrate examined by photoluminescence and X-ray topography

Transmission X-ray topography of the Ga-doped ZnTe crystals grown by the double crucible liquid encapsulated pulling (DCP) method is presented. The results show that dislocation density increases with growth direction from top to bottom. Photoluminescence (PL) intensity of the (A0, X) emission clearly decreases with the growth direction from top to bottom. Therefore, it is concluded that the PL intensity of the (A0, X) peak decreases with increasing dislocation density.