Diffusion profiles of low dosages chromium ions implanted into (1Â 0Â 0) crystalline silicon

Chromium ions with low dosages (1×1012 and 1×1013 cm−2) are implanted into silicon (1 0 0) crystalline substrates. Thermal anneals were carried out at different temperatures between 300 and 1000 °C to study the effects of ion implantation dose on the Cr diffusion profiles. Secondary ion mass spectrometry (SIMS) has been used to characterize the profiles of the Cr impurities. At 1×1012 cm−2 dosage and 500 °C anneal, the diffusivity of Cr in Silicon is determined to be 1.0×10−14 cm2 s−1.