Article ID Journal Published Year Pages File Type
729061 Materials Science in Semiconductor Processing 2006 4 Pages PDF
Abstract

Oxide precipitation behavior in heavily doped silicon after rapid thermal process (RTP) in Ar ambient was investigated. The samples were heavily B-, As- and Sb-doped wafers with a diameter of 150 mm, the concentration of interstitial oxygen was between 6 and 26 ppm. RTP temperatures were changed from 1200 to 1260 °C. The experiment showed that (1) High-density oxygen precipitates (above 105/cm2) were found in heavily B-doped wafer, denuded zone was found only at 1260 °C, (2) compared to the heavily B-doped wafers, the densities of oxygen precipitates in heavily As- and Sb-doped wafers were rather low. The formation of oxygen precipitates was restrained. The reason is discussed in this paper.

Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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