Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
729062 | Materials Science in Semiconductor Processing | 2006 | 6 Pages |
Abstract
The effect of stress induced by enhanced hydrostatic pressure (HP, up to 1.1Â GPa) at annealing up to 1400Â K of Ge-doped Czochralski silicon (Cz-Si:Ge) on a creation of thermal donors (TDs) and of oxygen-related defects is investigated by spectroscopic (FTIR) photoluminescence and electrical methods. While the presence of Ge results in reduced generation of TDs in Cz-Si:Ge annealed at 723Â K under 105Â Pa, HP applied at 698-748Â K produces TDs in a much enhanced concentration. The treatments under 1.1Â GPa at 1070-1270Â K result in increasing, for up to 20%, precipitation of oxygen. An explanation of the HP effect on a creation of defects in Cz-Si:Ge is proposed.
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Authors
A. Misiuk, Deren Yang, B. Surma, C.A. Londos, J. Bak-Misiuk, A. Andrianakis,