Oxygen precipitation and improved internal gettering in heavily As-doped silicon crystal

The behavior of oxygen precipitation and its induced defects in heavily As-doped silicon was investigated through annealing experiments. Comparison to similar investigations on heavily B- and Sb-doped silicon reveals the formation temperature of the oxygen precipitates dependence of dopant type. The experimental results showed that nucleation temperature of the oxygen precipitates in heavily As-doped Si is at 900 °Cand it is higher than for the other heavily doped silicon. And the density and size will be varied with the annealing temperature or time. The oxygen precipitates formed at moderate temperature can be the nucleation centers of the faults and dislocation loops. According to the annealing results, an internal gettering process was suggested for the heavily As-doped silicon and an ideal IG structure with 45 μm width was obtained.