| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 729077 | Materials Science in Semiconductor Processing | 2006 | 5 Pages |
Abstract
The structural damage and defects induced by the near-infrared femtosecond pulse in ZnSe crystal were investigated by scanning electron microscope and the photoluminescence spectra, respectively. The structural damage exhibits the different morphologies with the focusing angles of laser. The induced thermal strain is estimated to be about 8.7×10−3. Two induced point defects, zinc vacancy and selenium-related defects can exist permanently in femtosecond-irradiated ZnSe crystal, and VSe is the main factor of influencing SA emission.
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Authors
Huanyong Li, Wanqi Jie, Lan Yang, Shian Zhang, Zhenrong Sun, Kewei Xu,