Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
729097 | Materials Science in Semiconductor Processing | 2006 | 4 Pages |
Abstract
Raman backscattering measurements were carried out on Si crystals heavily doped with B and/or Ge over the temperature range from 123 to 573 K. It was found that the frequency of the q≈0 optical phonon in the Si crystals decreased almost linearly with increasing temperature, and the temperature coefficient depended on the B concentration. On the other hand, the change in frequency with temperature was relatively insensitive to Ge doping in comparison with B doping. However, heavy B and Ge codoping in Si resulted in a relatively larger temperature coefficient than B doping with the same B concentration.
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Authors
Xinming Huang, Kehui Wu, Mingwei Chen, Taishi Toshinori, Keigo Hoshikawa, Shinji Koh, Satoshi Uda,