Article ID Journal Published Year Pages File Type
729097 Materials Science in Semiconductor Processing 2006 4 Pages PDF
Abstract

Raman backscattering measurements were carried out on Si crystals heavily doped with B and/or Ge over the temperature range from 123 to 573 K. It was found that the frequency of the q≈0 optical phonon in the Si crystals decreased almost linearly with increasing temperature, and the temperature coefficient depended on the B concentration. On the other hand, the change in frequency with temperature was relatively insensitive to Ge doping in comparison with B doping. However, heavy B and Ge codoping in Si resulted in a relatively larger temperature coefficient than B doping with the same B concentration.

Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
Authors
, , , , , , ,