Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
729100 | Materials Science in Semiconductor Processing | 2006 | 5 Pages |
Abstract
The effect of uniform stress induced by enhanced hydrostatic pressure (HP, up to 1.1 GPa) at processing (at treatment temperature HT up to 1400 K) of Czochralski silicon (CzSi:Mn) and floating zone silicon (FzSi:Mn), implanted with Mn+ at 160 keV to a dose 1Ã1016 cmâ2 at substrate temperature Ts⩽340 K (CzSi:Mn) or Ts=610 K (FzSi:Mn), on their structure, creation of thermal donors and on magnetic properties has been investigated by secondary ion mass spectrometry, X-ray, photoluminescence, electrical and magnetic methods. By varying Ts, HT and HP one can produce samples of different structure and magnetic ordering. Contrary to the case of FzSi:Mn, the Mn profile in processed CzSi:Mn is shifted towards the sample surface; enhanced HP results in partial magnetic ordering. The reason for HP effect on the defect structure and magnetic properties of Si:Mn has been discussed.
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Authors
A. Misiuk, B. Surma, J. Bak-Misiuk, A. Barcz, W. Jung, W. Osinniy, A. Shalimov,