Radiation defects and degradation of C-doped SiGe diodes irradiated by electrons

The degradation of 2-MeV electron-irradiated C-doped SiGe diodes was investigated. After electron irradiation, the reverse current increases with increasing electron fluence, while the capacitance decreases. At the highest fluence studied (1×1016 e/cm2), a different behaviour of the reverse current with junction area was observed. DLT spectra show that a broad peak is observed for p+/n and n+/p diodes after 1×1015 e/cm2 electron irradiation. The degradation of the diodes is mainly attributed to the radiation-induced defects in SiGe layer.