| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 729107 | Materials Science in Semiconductor Processing | 2006 | 4 Pages |
Abstract
Silicon thin films with different crystalline ratio have been deposited by varying silane content of reactive gases in the RF-PECVD process. The effects of silane content on performance of the materials and the relationship between microstructure and opto-electronic properties are studied by Raman measurements, photo and dark conductivity. Then the measurements of light absorption coefficient and the product of quantum efficiency, mobility and lifetime are conducted before, during and after light soaking. The results indicate that the microcrystalline silicon near the transition region is suitable to prepare device grade microcrystalline silicon, and the amorphous region of the material is responsible to the light-induced degradation.
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Authors
Xiaoyan Han, Yan Wang, Junming Xue, Shuwen Zhao, Yangxian Li, Xinhua Geng,